Product Summary

The IHW15N120R2 is a Reverse Conducting IGBT with monolithic body diode.

Parametrics

Absolute maximum ratings: (1)Collector-emitter voltage: 1200 V ; (2)DC collector current: 30 A at TC = 25℃, 15 A at TC = 100℃; (3)Pulsed collector current, tp limited by Tjmax: 45; (4)Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C): 45; (5)Diode forward current: 30 at TC = 25℃, 15 at TC = 100℃; (6)Diode pulsed current, tp limited by Tjmax: 45; (7)Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms): ±20 V; (8)Power dissipation TC = 25℃: 357 W; (9)Operating junction temperature: -40 to +175 ℃ ; (10)Storage temperature: -55 to +175 ℃.

Features

Features: (1)Powerful monolithic Body Diode with very low forward voltage; (2)Body diode clamps negative voltages; (3)Trench and Fieldstop technology for 1200 V applications offers: very tight parameter distribution, high ruggedness, temperature stable behavior; (4)Low EMI; (5)Qualified according to JEDEC1 for target applications; (6)Pb-free lead plating; RoHS compliant; (7)Complete product spectrum and PSpice Models.

Diagrams

IHW15N120R
IHW15N120R
Infineon Technologies
IGBT Transistors REVERSE CONDUCT IGBT 1200V 15A
Data Sheet
Negotiable 
IHW15N120R2
IHW15N120R2
Infineon Technologies
IGBT Transistors REVERSE CONDUCT IGBT 1200V 15A
Data Sheet
Negotiable 
IHW15N120R3
IHW15N120R3
Infineon Technologies
IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
Data Sheet
0-1: $2.31
1-10: $2.06
10-100: $1.69
100-250: $1.52
IHW15T120
IHW15T120
Infineon Technologies
IGBT Transistors LOW LOSS DuoPack 1200V 15A
Data Sheet
0-97: $3.55
97-100: $2.91
100-250: $2.62
250-500: $2.36